The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2005

Filed:

Jul. 14, 2003
Applicants:

Nariaki Ikeda, Tokyo, JP;

Takeharu Yamaguchi, Tokyo, JP;

Satoshi Arakawa, Tokyo, JP;

Nobumitsu Yamanaka, Tokyo, JP;

Akihiko Kasukawa, Tokyo, JP;

Ryusuke Nakasaki, Tokyo, JP;

Inventors:

Nariaki Ikeda, Tokyo, JP;

Takeharu Yamaguchi, Tokyo, JP;

Satoshi Arakawa, Tokyo, JP;

Nobumitsu Yamanaka, Tokyo, JP;

Akihiko Kasukawa, Tokyo, JP;

Ryusuke Nakasaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L031/00 ;
U.S. Cl.
CPC ...
Abstract

An EA-DFB module including a DFB laser diode and an EA modulator formed on an InP first-conductivity-type substrate has a mesa stripe, a current blocking structure formed on both side surfaces of the mesa strip and a second InP cladding layer formed on top of the mesa stripe and the current blocking structure. The current blocking structure includes a Fe-doped semi-insulating film, a first conductivity-type buried layer and a carrier-depleted layer. The carrier-depleted layer reduces the parasitic capacitance at the boundary between the first-conductivity-type buried layer and the second InP cladding layer.


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