The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
May. 16, 2003
Taner Dosluoglu, New York, NY (US);
Nathaniel Joseph Mccaffrey, Stockton, NJ (US);
Taner Dosluoglu, New York, NY (US);
Nathaniel Joseph McCaffrey, Stockton, NJ (US);
Dialog Semiconductor GmbH, Kirchheim, DE;
Abstract
A CMOS pixel responsive to different colors of optical radiation without the use of color filters is described. A deep N well is formed in a P type silicon substrate. An N well is then formed at the outer periphery of the deep N well to form a P well within an N well structure. Two Nregions are formed in the P well and at least one Pregion is formed in the N well. A layer of gate oxide and a polysilicon electrode is then formed over one of the Nregions. The PN junction between the deep N well and the P type silicon substrate is responsive to red light. The PN junction between the deep N well and the P well is responsive to red light. The PN junction between the P well and the Nregion which is not covered by polysilicon and the PN junction formed by the N well and the Pregion are responsive to green or blue light. The PN junction formed by the junction between the P well and the Nregion which is covered by polysilicon is responsive to green light. The green signal is subtracted from the blue/green signal to produce a blue signal.