The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Nov. 26, 2003
Applicant:
Marie Denison, München, DE;
Inventor:
Marie Denison, München, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ; H01L031/062 ; H01L031/113 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract
A lateral double-diffused MOS transistor (LDMOS) has a body zone and additional body regions assigned to the body zone, thereby producing a 'deep body.' The deep body results in a quasi one-dimensional course of the potential lines, with the result that the dielectric strength is increased. The self-alignment between gate and channel is preserved, and parameter fluctuations are reduced.