The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Jun. 21, 2000
Jack A. Mandelman, Stormville, NY (US);
Gerhard Kunkel, Radebeul, DE;
Jack A. Mandelman, Stormville, NY (US);
Gerhard Kunkel, Radebeul, DE;
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Active areas of a Dynamic Random Access Memory (DRAM) formed on a semiconductor substrate are defined by buried bit lines on two sides and by conductors separated from the semiconductor substrate by electrically insulating layers on two other sides. The conductors are electrically biased during operation of the DRAM to cause portions of the semiconductor substrate therebelow to increase in majority carrier concentration and thus to inhibit inversion thereof. Each buried bit line is formed in a trench in the semiconductor substrate. Each trench houses a separate bit line and is lined with an electrical insulator and has a conductor in a bottom portion thereof.