The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2005

Filed:

Sep. 22, 2000
Applicants:

Jiamin Qiao, Fremont, CA (US);

Mira Ben-tzur, Sunnyvale, CA (US);

Prabhuram Gopalan, Fremont, CA (US);

Inventors:

Jiamin Qiao, Fremont, CA (US);

Mira Ben-Tzur, Sunnyvale, CA (US);

Prabhuram Gopalan, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract

According to one embodiment (), a method of forming borderless contacts may include forming a composite layer over a first insulating layer (). A contact hole may be formed through a composite layer and a first insulating layer (). A conducting layer may then be formed (), including within a contact hole. Portions of a conducting layer may then be removed with a composite layer as a polish stop (), and a contact structure may be formed. A first interconnect structure and a second insulating layer may then be formed over a first insulating layer (and). A borderless contact pattern may then be etched with a composite layer as an etch stop ().


Find Patent Forward Citations

Qiao, Jiamin. (2005). Method of making borderless contacts in an integrated circuit (U.S. Patent No. 6911395). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6911395

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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