The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
May. 06, 2003
Applicants:
Hsingya Arthur Wang, San Jose, CA (US);
Kai-cheng Chou, San Jose, CA (US);
Peter Rabkin, Cupertino, CA (US);
Inventors:
Hsingya Arthur Wang, San Jose, CA (US);
Kai-Cheng Chou, San Jose, CA (US);
Peter Rabkin, Cupertino, CA (US);
Assignee:
Hynix Semiconductor, Inc., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/331 ; H01L021/8222 ;
U.S. Cl.
CPC ...
Abstract
A non-volatile memory device includes a substrate having a first active region and a second active region. A first floating gate is provided over the first active region and having an edge, the first floating gate being made of a conductive material. A first spacer is connected to the edge of the first floating gate and being made of the same conductive material as that of the first floating gate. A control gate is provided proximate to the floating gate.