The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Jul. 16, 2004
Ted Johansson, Djursholm, SE;
Hans Norström, Solna, SE;
Anders Lindgren, Sollentuna, SE;
Infineon Technologies AG, Munich, DE;
Abstract
In a bipolar double-poly transistor comprising a layer of base silicon (') on a silicon substrate (′), a first layer of silicon dioxide (′) on the base silicon layer (′), an emitter window (′) extending through the first layer (′) of silicon dioxide and the base silicon layer (′), a second layer (′) of silicon dioxide in the emitter window (′), silicon nitride spacers (′) on the second layer (′) of silicon dioxide in the emitter window (′), and emitter silicon (′) in the emitter window (′), an isolating silicon nitride seal is provided to separate the base silicon (′) from the emitter silicon (′) to prevent short-circuiting between the base silicon (′) and the emitter silicon (′) in the transistor.