The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6911365 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 28, 2005

Filed:

Feb. 24, 2004
Applicant:

Shunji Nakamura, Kawasaki, JP;

Inventor:

Shunji Nakamura, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/356 ;
U.S. Cl.
CPC ...
Abstract

A capacitorcomprises a lower electrodeformed on a substrate, an upper electrodeopposed to the lower electrode, and a capacitor dielectric filmformed between the lower electrode and the upper electrode, in which at least one of the lower electrode and the upper electrodes is an electrode of a metal substituted layer. The lower electrodes of polysilicon are formed, and then after the high-temperature heat processing for improving film quality of the capacitor dielectric film has been performed, the lower electrodes of polysilicon is substituted with aluminum to form the lower electrodes of aluminum, whereby aluminum, which cannot withstand the heat processing for improving film quality of the capacitor dielectric film can be used as a material of the lower electrodes. Thus, capacitors having good high-speed response can be formed.


Find Patent Forward Citations

Nakamura, Shunji. (2005). Capacitor and method for fabricating the same and semiconductor device (U.S. Patent No. 6911365). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6911365

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