The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Jul. 25, 2003
Takeshi Takada, Kyoto, JP;
Naoto Okada, Nara, JP;
Takeshi Takada, Kyoto, JP;
Naoto Okada, Nara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device which is capable of suppressing short-circuit currents caused to flow through defective areas in a first semiconductor layer can be manufactured at high yield, by utilizing a method of manufacturing a semiconductor device including the steps of forming a first semiconductor layer on a substrate, forming a first transparent electroconductive layer on the first semiconductor layer, and forming a second semiconductor layer on the first transparent electroconductive layer, the method further including executing passivation treatment on defects in the first semiconductor layer before the formation of the second semiconductor layer.