The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Jul. 30, 2002
Applicant:
Kazuhiko Hara, Yokohama, JP;
Inventor:
Kazuhiko Hara, Yokohama, JP;
Assignee:
Tokyo Institute of Technology, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B025/00 ; C30B029/00 ;
U.S. Cl.
CPC ...
Abstract
In a creation section of GaN crystal nuclei, a gallium vapor and an ammonia gas are chemically reacted to create GaN crystal nuclei, which are transported into a growth section of GaN powders with a nitrogen carrier gas. In the growth section of GaN powders, a gallium chloride created in a pre-reactor is chemically reacted with the ammonia gas transported from the creation section of GaN crystal nuclei on the GaN crystal nuclei, to produce GaN powders through the crystal growth.