The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Oct. 03, 2001
Katsuya Samonji, Takatsuki, JP;
Toru Takayama, Nara, JP;
Osamu Imafuji, Takatsuki, JP;
Masaaki Yuri, Ibaraki, JP;
Katsuya Samonji, Takatsuki, JP;
Toru Takayama, Nara, JP;
Osamu Imafuji, Takatsuki, JP;
Masaaki Yuri, Ibaraki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of AlGaAs and a p-type cladding layer of (AlGa)InP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.