The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Dec. 30, 2003
Young-hun Seo, Kyungki-do, KR;
Young-Hun Seo, Kyungki-do, KR;
Dongbuanam Semiconductor Inc., Seoul, KR;
Abstract
The present invention is directed to a method for fabricating a thin film capacitor of a metal/insulator/metal (MIM) structure, which is capable of enabling small-sizing of a semiconductor device while maintaining electrostatic capacity of a capacitor. The method comprises the steps of: forming a heterogeneous film on a lower insulation film on a structure of a semiconductor substrate; forming a plurality of projections by selectively etching the heterogeneous film; and forming a first electrode layer, a dielectric layer, and a second electrode layer on the lower insulation including the plurality of projections in order along a surface shape of the projections such that a plurality of projecting parts are formed in the first electrode layer, the dielectric layer and the second electrode layer, respectively.