The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Sep. 24, 2003
Stanislav V. Polonsky, Putnam Valley, NY (US);
Alan J. Weger, Mohegan Lake, NY (US);
Moyra K. MC Manus, Peekskill, NY (US);
Stanislav V. Polonsky, Putnam Valley, NY (US);
Alan J. Weger, Mohegan Lake, NY (US);
Moyra K. Mc Manus, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed are a method and system for analyzing leakage current luminescence in CMOS circuits. The method comprises the steps of collecting light emission data from each of a plurality of CMOS circuits, and separating the CMOS circuits into first and second groups. For the first group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on the presence or absence of leakage light from the CMOS circuits, to identify logic states for the CMOS circuits. For the second group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on modulation of the intensity of the light from the CMOS circuits, to determine values for given parameters of the circuits. These parameters may be, for example, temperature, cross-talk or power distribution noise.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile