The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Dec. 07, 1998
Yasuo Kondo, Hitachinaka, JP;
Junya Kaneda, Hitachi, JP;
Tasuhisa Aono, Hitachi, JP;
Teruyoshi Abe, Hitachi, JP;
Masahisa Inagaki, Hitachi, JP;
Ryuichi Saito, Hitachi, JP;
Yoshihiko Koike, Hitachinaka, JP;
Hideo Arakawa, Hitachi, JP;
Yasuo Kondo, Hitachinaka, JP;
Junya Kaneda, Hitachi, JP;
Tasuhisa Aono, Hitachi, JP;
Teruyoshi Abe, Hitachi, JP;
Masahisa Inagaki, Hitachi, JP;
Ryuichi Saito, Hitachi, JP;
Yoshihiko Koike, Hitachinaka, JP;
Hideo Arakawa, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A composite material is provided, which has a low thermal expansivity, a high thermal conductivity, and a good plastic workability, which composite material may be applied to semiconductor devices and many other uses. The composite material is composed of metal and inorganic particles having a smaller coefficient of thermal expansion than the metal. It is characterized in that the inorganic particles are dispersed in such a way that 95% or more of them (in terms of their area in cross-section) form aggregates of complex configuration joined together. The composite material contains 20-80 vol % of copper oxide, with the remainder being copper. It has a coefficient of thermal expansion of 5×10to 14×10/° C. and thermal conductivity of 30-325 W/m·K in the range of room temperature to 300° C. It is suitable for the radiator plate of semiconductor devices and the dielectric plate of electrostatic attractors.