The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Dec. 03, 2002
Tadao Ishibashi, Hiratsuka, JP;
Yukihiro Hirota, Atsugi, JP;
Yoshifumi Muramoto, Isehara, JP;
NTT Electronics Corporation, Tokyo, JP;
Abstract
A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width Wand a p-type neutral second semiconductor optical absorption layer with a layer width W. The ratio between Wand Wis set such that the total carrier transit time τbecomes minimum in the optical absorption layer. The photodiode can further include a depleted semiconductor optical transmission layer with a bandgap greater than that of the first semiconductor optical absorption layer, between the first semiconductor optical absorption layer and an n-type semiconductor electrode layer.