The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Nov. 26, 2003
Applicants:
Shiang-feng Tang, Taoyuan, TW;
Shih-yen Lin, Hsinchu, TW;
Si-chen Lee, Taipei, TW;
Ya-tung Cherng, Taoyuan, TW;
Inventors:
Shiang-Feng Tang, Taoyuan, TW;
Shih-Yen Lin, Hsinchu, TW;
Si-Chen Lee, Taipei, TW;
Ya-Tung Cherng, Taoyuan, TW;
Assignee:
Chung-Shan Institute of Science and Technology, Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/06 ;
U.S. Cl.
CPC ...
Abstract
An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.