The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Jan. 31, 2002
Shigemi Sato, Asahi-mura, JP;
Hideto Yamashita, Suwa, JP;
Tsutomu Hagihara, Nagano-ken, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
To provide a thermopile infrared detecting element capable of accurate temperature measurement at low cost. An infrared detecting elementusing a silicon nitride film as a first structure layerconstituting a structure of a membrane portionis provided. Unlike silicon oxide, the first structure layerhas internal stress in the tensile direction, and can thus prevent the occurrence of bending. Also, diodes Dand Dcan be formed in a silicon substrateby using the first structure layeras an element isolation region, and thus deformation of a thermopiledue to a change in the environment can be prevented to suppress measurement error of the thermopile. Furthermore, a high accuracy infrared detecting element capable of accurately detecting the temperature of cold junctions using the diodes Dand Dcan be provided.