The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Jun. 07, 2001
Suk-il Yoon, Kyungki-do, KR;
Young-woong Park, Suwon, KR;
Chang-il OH, Seongnam, KR;
Sang-dai Lee, Kyungki-do, KR;
Chong-soon Yoo, Kyungki-do, KR;
Suk-Il Yoon, Kyungki-do, KR;
Young-Woong Park, Suwon, KR;
Chang-Il Oh, Seongnam, KR;
Sang-Dai Lee, Kyungki-do, KR;
Chong-Soon Yoo, Kyungki-do, KR;
Dongjin Semichem, Co., Ltd., Incheon, KR;
Abstract
The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2˜20 weight % of water-soluble hydroxylamine, 5˜15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30˜55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride. In addition, during removing process of photoresist, the photoresist remover composition can minimize the corrosion of lower metal film, in particular, the new metallic layers which is adopted to a production line of 64 MDRAM or more-VLSL