The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Dec. 28, 2001
Dong Suk Shin, Kyoungki-do, KR;
Dong Suk Shin, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method of fabricating a semiconductor device having the steps of forming an insulating layer on a silicon substrate; forming a contact hole in the insulating layer so that a portion of the silicon substrate is exposed in the contact hole; performing an interface treatment process to the exposed portion of the silicon substrate, wherein the interface treatment process includes at least a dry cleaning and a hydrogen heat treatment; and forming a selective silicon plug including single crystalline and polycrystalline silicon structures on the exposed portion of the silicon substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile