The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Nov. 14, 2002
Shuming Xu, Santa Clara, CA (US);
Hanhua Feng, Singapore, SG;
Pang Dow Foo, Singapore, SG;
Bai Xu, Albany, NY (US);
Uppili Sridhar, Singapore, SG;
Shuming Xu, Santa Clara, CA (US);
Hanhua Feng, Singapore, SG;
Pang Dow Foo, Singapore, SG;
Bai Xu, Albany, NY (US);
Uppili Sridhar, Singapore, SG;
Institute of Microelectronics, Singapore Science Park, SG;
Abstract
The invention relates to a method of making an integrated circuit inductor that comprises a silicon substrate and an oxide layer on the silicon substrate. In one aspect, the method comprises depositing an inductive loop on the oxide layer, and making a plurality of apertures in the oxide layer beneath the inductive loop. The method also comprises providing a plurality of bridges adjacent the apertures and provided by portions of the oxide layer between an inner region within the inductive loop and an outer region of the oxide layer without the inductive loop, the inductive loop being supported on the bridges. The method comprises forming a trench in the silicon substrate beneath the bridges, to provide an air gap between the inductive loop and the silicon substrate.