The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Dec. 18, 2003
Yong Soo Cho, Daejeon-Metropolitan, KR;
Yong Soo Cho, Daejeon-Metropolitan, KR;
Dongbuanam Semiconductor Inc., Seoul, KR;
Abstract
The present invention relates to a method of manufacturing a semiconductor device. According to the present invention, a passivation layer is temporarily formed on semiconductor substrate and a process of implanting impurities is conducted by the passivation layer as a protection mask, thereby inducing damages of substrate due to ion implantation processes to be minimized. According to the present invention, implantation of impurities depends on thickness of the passivation layer, so that it is made possible to freely control impurity implantation by controlling thickness of passivation layer. Therefore, it is made possible to control a diffusion range of the lightly doped source/drain electrode.