The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2005

Filed:

Aug. 15, 2002
Applicants:

Amir Fardad, Tucson, AZ (US);

Wei Liang, Tucson, AZ (US);

Yadong Zhang, Tucson, AZ (US);

Inventors:

Amir Fardad, Tucson, AZ (US);

Wei Liang, Tucson, AZ (US);

Yadong Zhang, Tucson, AZ (US);

Assignee:

NP Photonics, Inc., Tucson, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F007/16 ;
U.S. Cl.
CPC ...
Abstract

A photo-patternable perfluorinated silane sol-gel material is presented that exhibits a high refractive index and propagation losses below 1 dB/cm at the telecommunication wavelengths. The sol-gels are produced with general formula [(CH),R'—Si(O)]—[Si(O)]—[R′—Si(O)]—[R″(CH)—M(O)]—[R′″(CH)—Si(O)]where O is oxygen, Si is silicon, M is a metal alkoxyde known to form bonds with organic compounds through oxygen donor ligands, and where, R″ and R′″ are photo cross-linkable groups, and where (CH)are alkyl spacers with n being an integer ≧0. The sol-gels can be fabricated to produce complex waveguide structures directly onto silica-on-silicon substrates with low bending losses.


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