The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Aug. 08, 2003
Dan Botez, Madison, WI (US);
Dan Botez, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Semiconductor light emitting sources are formed to have a substrate, an active region layer having one or more quantum wells, optical confinement layers surrounding the active region layer, and a p-type cladding layer and an n-type cladding layer surrounding the confinement layers and the active region layer. At least one of the optical confinement layers has a region of doping therein that is formed to provide a built-in electric field in the confinement layer that is directed to cause drift of carriers toward the active region. The electric field increases the transport speed of the injected holes or electrons, thereby reducing the non-ohmic voltage drop and increasing the overall efficiency of the light emitting source.