The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Oct. 03, 2003
Shey-shi LU, Taipei, TW;
Shey-shi Lu, Taipei, TW;
Memetics Technology, Co., Ltd., Taipei, TW;
National Taiwan University, Taipei, TW;
Abstract
The designing methods for an impedance matching are provided which include steps of: connecting in parallel a capacitor to a collector/drain of a bipolar/field effect transistor having a common-emitter configuration, and obtaining a desired resistance at a base/gate of the bipolar/field effect transistor due to a feedback effect for achieving the impedance matching. The circuits for an impedance matching are also provided which include: a first bipolar/field effect transistor, an inductor, a first resistor, a power supply, a capacitor, a second bipolar/field effect transistor, a second resistor, and a third resistor, wherein a desired resistance is produced in the input impedance looking into the base/gate of the first bipolar/field effect transistor through an equivalent parallel combination of an capacitor and an resistor produced at the base/gate of the second bipolar/field effect transistor so as to achieve the impedance matching.