The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Jan. 13, 2004
Romain Delhougne, Igny, FR;
Roger Loo, Kessel-Lo, BE;
Philippe Meunier-beillard, Bertem, BE;
Mathieu Caymax, Leuven, BE;
Romain Delhougne, Igny, FR;
Roger Loo, Kessel-Lo, BE;
Philippe Meunier-Beillard, Bertem, BE;
Mathieu Caymax, Leuven, BE;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Koninklijke Philips Electronics, Eindhoven, NL;
Abstract
A semiconductor device is provided comprising a semiconductor substrate having on its top a Thin Strain Relaxed Buffer. The Thin Strain Relaxed Buffer consists of a stack of three layers of essentially constant Ge concentration. The three layers include a first epitaxial layer of SiGe, a second epitaxial layer of SiGe:C, and a third epitaxial layer of SiGeon the second epitaxial layer. A method to fabricate such a buffer is also provided.