The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
May. 30, 2002
John Adam Edmond, Cary, NC (US);
Kathleen Marie Doverspike, Apex, NC (US);
Hua-shuang Kong, Raleigh, NC (US);
Michael John Bergmann, Durham, NC (US);
David Todd Emerson, Durham, NC (US);
John Adam Edmond, Cary, NC (US);
Kathleen Marie Doverspike, Apex, NC (US);
Hua-Shuang Kong, Raleigh, NC (US);
Michael John Bergmann, Durham, NC (US);
David Todd Emerson, Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlInGaN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1; a second n-type cladding layer of AlInGaN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InGaN well layers where 0<x<1 separated by a corresponding plurality of AlInGaN barrier layers where 0≦x≦1 and 0≦y≦1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers. In preferred embodiments, a Group III nitride superlattice supports the multiple quantum well.