The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2005

Filed:

Apr. 24, 2003
Applicant:

Kazutoshi Ishii, Chiba, JP;

Inventor:

Kazutoshi Ishii, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/12 ; H01L029/76 ;
U.S. Cl.
CPC ...
Abstract

Disclosed is a semiconductor device having a reduced size, increased accuracy, and flattened element isolation regions with an decreased size. A plurality of MOSFETs having gate oxide films with different thicknesses and element isolation regions are formed by a manufacturing method employing oxygen implantation. An oxygen-ion implantation process and an annealing process are applied to a method of manufacturing the semiconductor device.


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