The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Oct. 22, 2003
Hao Cui, West Linn, OR (US);
Peter A. Burke, Portland, OR (US);
Wilbur G. Catabay, Saratoga, CA (US);
Hao Cui, West Linn, OR (US);
Peter A. Burke, Portland, OR (US);
Wilbur G. Catabay, Saratoga, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile