The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Dec. 26, 2002
Jie Zhang, Buffalo Grove, IL (US);
Daniel Gamota, Palatine, IL (US);
Min-xian Zhang, Inverness, IL (US);
Paul Brazis, South Elgin, IL (US);
Krishna Kalyanasundaram, Chicago, IL (US);
Jie Zhang, Buffalo Grove, IL (US);
Daniel Gamota, Palatine, IL (US);
Min-Xian Zhang, Inverness, IL (US);
Paul Brazis, South Elgin, IL (US);
Krishna Kalyanasundaram, Chicago, IL (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film () that has an electrically conducting layer () on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (), and a polymer film () is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure () or an adhesive layer (). A source electrode and a drain electrode () are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor () is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.