The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Dec. 21, 2001
Applicant:
Vlad J. Novotny, Los Gatos, CA (US);
Inventor:
Vlad J. Novotny, Los Gatos, CA (US);
Assignee:
Active Optical Networks, Inc., Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract
Described is a photolithography 'pattern transfer' process for forming Micro-Electro-Mechanical Systems (MEMS) structures. A first material layer is patterned so that raised portions of the layer define features of a MEMS structure to be formed. The resulting pattern is then 'transferred' to the surface of a second material layer by etching the top surface of the first material layer, including the raised portions and the valleys defined between the raised portions, until the second layer is exposed between the raised portions.