The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2005

Filed:

Mar. 22, 2000
Applicants:

Takenori Goto, Moriguchi, JP;

Nobuhiko Hayashi, Osaka, JP;

Inventors:

Takenori Goto, Moriguchi, JP;

Nobuhiko Hayashi, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S005/00 ;
U.S. Cl.
CPC ...
Abstract

An n-contact layer, an n-cladding layer, an MQW active layer, and a p-first cladding layer are formed in this order on a sapphire substrate. An n-current blocking layer having a striped opening is formed on the p-first cladding layer. The width of the striped opening gradually increases from Wto Was the depth thereof decreases from a lower layer to an upper layer in the current blocking layer. A p-second cladding layer is formed on the n-current blocking layer and on the p-first cladding layer inside the striped opening. The p-second cladding layer comprises a lower layer having the width Wat its lower end and an upper layer having a width Wlager than the width W


Find Patent Forward Citations

Goto, Takenori. (2005). Semiconductor laser device and method of fabricating the same (U.S. Patent No. 6904071). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6904071

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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