The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jan. 17, 2003
Applicants:
Gérard Auriel, Tours, FR;
Laurent Cornibert, Tours, FR;
Inventors:
Gérard Auriel, Tours, FR;
Laurent Cornibert, Tours, FR;
Assignee:
STMicroelectronics S.A., Gentilly, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/00 ;
U.S. Cl.
CPC ...
Abstract
A vertical power component on a silicon wafer, including a lightly-doped epitaxial layer of a second conductivity type on the upper surface of a heavily-doped substrate of a first conductivity type, the epitaxial layer having a thickness adapted to withstanding the maximum voltage likely to be applied to the power component during its operation; and an isolating wall formed by etching a trench through the epitaxial layer and diffusing from this trench a dopant of the first conductivity type of high doping level.