The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Apr. 15, 2003
Dale F. Berndt, Plymouth, MN (US);
Andrzej Peczalski, Eden Prairie, MN (US);
Eric E. Vogt, Minneapolis, MN (US);
William F. Witcraft, Minneapolis, MN (US);
Dale F. Berndt, Plymouth, MN (US);
Andrzej Peczalski, Eden Prairie, MN (US);
Eric E. Vogt, Minneapolis, MN (US);
William F. Witcraft, Minneapolis, MN (US);
Honeywell International, Inc., Morristown, NJ (US);
Abstract
A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third terminal, each of which is located between two adjacent gated regions other than the two innermost gated regions, output positive and negative Hall voltages. By appropriately controlling a bias voltage to the gated regions, small changes in a magnetic field induces larger currents in channel regions under the gated regions, which, in turn, results in detectable Hall voltages.