The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jul. 01, 2003
Akira Goda, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Shigehiko Saida, Yokkaichi, JP;
Akira Goda, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Shigehiko Saida, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.