The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2005

Filed:

Apr. 24, 2003
Applicants:

Ming-der Lin, Hsinchu, TW;

Chang-da Tsai, Taoyuan, TW;

Inventors:

Ming-Der Lin, Hsinchu, TW;

Chang-Da Tsai, Taoyuan, TW;

Assignee:

Opto Tech Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L033/00 ;
U.S. Cl.
CPC ...
Abstract

The present invention discloses a light-emitting diode and a method for manufacturing such a light-emitting diode with a direct band-gap III-V compound semiconductor material on a GaAs substrate. It is implemented by forming a first conductive electrode on the top edge of the epitaxial LED layer and a second conductive electrode opposite the first conductive electrode on the edge of a transparent substrate. Further, after the first conductive electrode and second conductive electrode are connected by chip bonding skill, it is selectively to remove the GaAs substrate and plate a transparent electrode on the top portion of the epitaxial LED layer. Therefore, when casting from P-N junction of the light-emitting diode, the light will go through with directions of the top portion of epitaxial layer and transparent substrate.


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