The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Nov. 23, 1999
Ashraf W. Lotfi, Bridgewater, NJ (US);
Jian Tan, Bridgewater, NJ (US);
Ashraf W. Lotfi, Bridgewater, NJ (US);
Jian Tan, Bridgewater, NJ (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A lateral metal-oxide semiconductor field effect transistor (MOSFET) formed over a substrate of a semiconductor wafer, a method of manufacturing the same and a semiconductor device incorporating the MOSFET or the method. In one embodiment, the MOSFET includes a silicon carbide layer located over or withing the substrate, a gate formed on the silicon carbide layer. The MOSFET further includes source and drain regions located in the silicon carbide layer and in contact with the gate, the silicon carbide layer increasing a breakdown voltage of the MOSFET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile