The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Nov. 13, 2003
Toru Hirohata, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Tomoko Mochizuki, Hamamatsu, JP;
Masami Yamada, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Tomoko Mochizuki, Hamamatsu, JP;
Masami Yamada, Hamamatsu, JP;
Hamamatsu Photonics K.K., Shizuoka, JP;
Abstract
The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.