The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jun. 23, 2004
Jae Won Han, Bucheon-si, KR;
Jae Won Han, Bucheon-si, KR;
Anam Semiconductor, Inc., Seoul, KR;
Abstract
A sputter etch method in the semiconductor fabrication is disclosed. A sputter etch method for etching a layer on a semiconductor substrate in a chamber by RF plasma, includes loading a substrate for conditioning into the chamber, depositing a metal coating layer on the inside wall of the chamber by sputter etching the substrate for conditioning in the chamber, unloading the substrate for conditioning from the chamber, loading the semiconductor substrate with the layer, and etching the layer on the semiconductor substrate. Accordingly, the sputter etch method can enhance a reliability for a fabrication process of a semiconductor device under the environment of the substantial decrease in impurity falling probability. In other words, the impurity falling probability can be decreased by coating a metal layer on the wall of the sputter etch chamber employing a wafer on which a barrier metal layer is deposited right before a main lot in a sputter etch process.