The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
May. 08, 2003
Applicants:
Sang-yong Kim, Yongin, KR;
Kun-tack Lee, Suwon, KR;
Yong-pil Han, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A method and semiconductor memory device are provided for manufacturing storage nodes using wet etching and dry etching including, when removing a silicon oxide layer including storage nodes, wet etching a portion of the silicon oxide layer using a buffered oxide etchant ('BOE') solution or a hydrogen fluoride ('HF') solution, and dry etching the remaining silicon oxide layer using a mixed gas of anhydrous HF, isopropyl alcohol (“IPA”) and vapor to thereby prevent short circuits caused by fallen storage nodes in the semiconductor memory device.