The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Aug. 19, 2002
Theodore S. Moise, Los Altos, CA (US);
Guoqiang Xing, Plano, TX (US);
Mark Visokay, Boise, ID (US);
Justin F. Gaynor, San Jose, CA (US);
Stephen R. Gilbert, San Francisco, CA (US);
Francis Celii, Dallas, TX (US);
Scott R. Summerfelt, Cupertino, CA (US);
Luigi Colombo, Dallas, TX (US);
Theodore S. Moise, Los Altos, CA (US);
Guoqiang Xing, Plano, TX (US);
Mark Visokay, Boise, ID (US);
Justin F. Gaynor, San Jose, CA (US);
Stephen R. Gilbert, San Francisco, CA (US);
Francis Celii, Dallas, TX (US);
Scott R. Summerfelt, Cupertino, CA (US);
Luigi Colombo, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile