The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jun. 06, 2002
Chien-hua Chen, Corvallis, OR (US);
Donald E. Wenzel, Albany, OR (US);
Qin Liu, Corvallis, OR (US);
Naoto Kawamura, Corvallis, OR (US);
Colby Van Vooren, Corvallis, OR (US);
Colin C Davis, Corvallis, OR (US);
Richard W Seaver, Corvallis, OR (US);
Carl Wu, Corvallis, OR (US);
Jeffery S Hess, Corvallis, OR (US);
Chien-Hua Chen, Corvallis, OR (US);
Donald E. Wenzel, Albany, OR (US);
Qin Liu, Corvallis, OR (US);
Naoto Kawamura, Corvallis, OR (US);
Colby Van Vooren, Corvallis, OR (US);
Colin C Davis, Corvallis, OR (US);
Richard W Seaver, Corvallis, OR (US);
Carl Wu, Corvallis, OR (US);
Jeffery S Hess, Corvallis, OR (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.