The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2005

Filed:

Apr. 22, 2003
Applicant:

Akira Noguchi, Kanagawa, JP;

Inventor:

Akira Noguchi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F009/45 ;
U.S. Cl.
CPC ...
Abstract

Disclosed is a method for correcting a transistor of a predetermined threshold value. According to the method, after preparing a gateof the transistor, depending on how well the gate is prepared, a threshold voltage Vth showing transistor characteristic is corrected by adjusting an oxygen concentration of a lamp-annealing stepwhich is to be performed subsequently. Moreover, disclosed is a method for fabricating a transistor of a predetermined threshold value. According to the method, after preparing the gateof the transistor, the threshold voltage Vth showing the transistor characteristic is predicted or measured. When the threshold voltage deviates from the predetermined value, the oxygen concentration is adjusted in the lamp-annealing stepof the transistor that is to be fabricated subsequently and thus the threshold value is set to the predetermined value without lowered reliability due to the damage of the gate oxide film and without additional process steps.


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Noguchi, Akira. (2005). Method for fabricating transistor (U.S. Patent No. 6901568). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6901568

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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