The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Jul. 03, 2002
Akihiro Mukaiyama, Kaisei-machi, JP;
Toshiaki Fukunaga, Kaisei-machi, JP;
Toshiaki Kuniyasu, Kaisei-machi, JP;
Akihiro Mukaiyama, Kaisei-machi, JP;
Toshiaki Fukunaga, Kaisei-machi, JP;
Toshiaki Kuniyasu, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;
Abstract
In a semiconductor laser device: a p-type AlGaAs cladding layer is formed above an active layer, where z≧0.3; a p-type GaAs contact layer is formed on the cladding layer except for at least one near-edge portion of the cladding layer; and an electrode is formed on at least the contact layer. The upper surface of each of the at least one near-edge portion of the cladding layer is insulated, where each of the at least one near-edge portion of the cladding layer is located in a vicinity of one of opposite end facets perpendicular to the direction of laser emission.