The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Dec. 20, 2002
Hoki Kwon, Plymouth, MN (US);
Hoki Kwon, Plymouth, MN (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
Distributed Bragg reflectors (DBRs), and VCSELs that use such DBRs, comprised of AlP layers on InP substrates. When grown on an InP substrate, if the critical layer thickness (t) of AlP is greater than λ/4n, where nis the index of refraction of InP and λ is the wavelength, then the DBR can be grown using alternating layers of InP and AlP, wherein the thickness of the AlP is less than the critical thickness. If the critical layer thickness (t) of AlP is greater than λ/4n, then the DBR mirror is grown using alternating layers of InP and of an AlP/InP superlattice, wherein the AlP/InP superlattice is comprised of InP and of AlP wherein the thickness of the AlP is less than the critical thickness.