The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Sep. 20, 2002
Connie J. Chang-hasnain, Palo Alto, CA (US);
Pei-cheng Ku, Richmond, CA (US);
Connie J. Chang-Hasnain, Palo Alto, CA (US);
Pei-Cheng Ku, Richmond, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A variable semiconductor all-optical buffer and method of fabrication is provided where buffering is achieved by slowing down the optical signal using a control light source to vary the dispersion characteristic of the medium based on electromagnetically induced transparency (EIT). Photonic bandgap engineering in conjunction with strained quantum wells (QWs) and quantum dots (QDs) achieves room temperature operation of EIT. Photonic crystals are used to sharpen the spectral linewidths in a quantum well structure due to its density of states and in a quantum-dot structure caused by the inhomogeneity of the dot size, typically observed in state-of-the-art QD materials. The configuration facilitates monolithic integration of an optical buffer with an amplifier and control laser to provide advantages over other material systems as candidates for optical buffers.