The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
May. 02, 2003
Hisaya Sakai, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Nobuyuki Ohtsuka, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device comprises of an insulating film () formed over a semiconductor substrate (), a trench () and a hole () formed in the insulating film (), a first underlying layer () formed in at least one of the trench () and the hole () and made of conductive material to prevent diffusion of copper, a main conductive layer () formed in at least one of the trench () and the hole () on the first underlying layer () and made of copper or copper alloy, and a second underlying layer () formed between the main conductive layer () and the first underlying layer () and having a metal element that is solid-solved in the main conductive layer at an interface between the second underlying layer () and the main conductive layer (), and formed on the first underlying layer () by a CVD method.