The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Mar. 14, 2002
Yoshio Aoki, Yamanashi, JP;
Yutaka Mimino, Yamanashi, JP;
Osamu Baba, Yamanashi, JP;
Muneharu Gotoh, Yamanashi, JP;
Yoshio Aoki, Yamanashi, JP;
Yutaka Mimino, Yamanashi, JP;
Osamu Baba, Yamanashi, JP;
Muneharu Gotoh, Yamanashi, JP;
Fujitsu Quantum Devices Limited, Nakakoma-gun, JP;
Abstract
A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.