The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Sep. 17, 2003
Tsuyoshi Maruyama, Tokyo, JP;
Kazuhisa Ishii, Tokyo, JP;
Ken Sasakura, Tokyo, JP;
Shotaro Tomita, Tokyo, JP;
Keizo Kawaguchi, Tokyo, JP;
Toshio Tomiyoshi, Tokyo, JP;
Tsuyoshi Maruyama, Tokyo, JP;
Kazuhisa Ishii, Tokyo, JP;
Ken Sasakura, Tokyo, JP;
Shotaro Tomita, Tokyo, JP;
Keizo Kawaguchi, Tokyo, JP;
Toshio Tomiyoshi, Tokyo, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.