The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Mar. 16, 2001
Shuji Nakamura, Tokushima, JP;
Shinichi Nagahama, Komatsushima, JP;
Naruhito Iwasa, Tokushima, JP;
Hiroyuki Kiyoku, Tokushima-ken, JP;
Shuji Nakamura, Tokushima, JP;
Shinichi Nagahama, Komatsushima, JP;
Naruhito Iwasa, Tokushima, JP;
Hiroyuki Kiyoku, Tokushima-ken, JP;
Nichia Corporation, Tokushima, JP;
Abstract
A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.