Enhanced high-frequency via interconnection for improved reliability

Abstract

Replacements of thick film pads with smaller, thinner, metal contacts or straps are used to eliminate many of the stress-related failure modes associated with the larger contact pads. These straps allow for a more simplified manufacturing process than that associated with an anchored I/O pad configuration. A single via, electrically connected to a plurality of vias in a substrate layer above, is introduced to enhance the reliability of the signal net, and provides for higher frequency applications through reduction in parasitic capacitance and electrical leakage. The straps are directionally located toward the substrate center. Once the locations of the internal strap vias are redirected to lower local distance-to-neutral points, still within the same I/O capture pad, and directed towards the center of the substrate, single vias are then placed at the strap end closest the substrate center.